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K2220 - Silicon N Channel MOS FET

Features

  • High power gain.
  • Excellent frequency response.
  • High speed switching.
  • Wide area of safe operation.
  • Enhancement-mode.
  • Good complementary characteristics.
  • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005.

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Datasheet Details

Part number K2220
Manufacturer Renesas
File Size 57.44 KB
Description Silicon N Channel MOS FET
Datasheet download datasheet K2220 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 5 2SK2220, 2SK2221 Absolute Maximum Ratings Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.
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