HITK0201MP switching equivalent, silicon n channel mos fet power switching.
* Low on-resistance RDS(on) = 25 m typ (VGS = 4.5 V, ID = 2.4 A)
* Low drive current
* High speed switching
* 2.5 V gate drive R07DS0479EJ0100 Rev.1.00 J.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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