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HAT2053M
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device can be driven from 3 V source
Outline
RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6)
4
5
6
3
G 3
2
1
REJ03G1172-0500 (Previous: ADE-208-755C)
Rev.5.00 Sep 07, 2005
1256 DDDD
S 4
4 3 1, 2, 5, 6
Source Gate Drain
Rev.5.00 Sep 07, 2005 page 1 of 3
HAT2053M
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation
VDSS
VGSS ID Note 2 ID (pulse) Note 1 IDR Note 2 Pch Note 2 Pch Note 3
20 ±12 6.1 24.4 6.1 2.0 1.
HAT2053M Datasheet
