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HAT2050T - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance.
  • Capable of 4 V gate drive.
  • Low drive current.
  • High density mounting Outline.

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Full PDF Text Transcription

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HAT2050T Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PTSP0008JB-A (Package name: TSSOP-8 ) 1 8 D D 8765 1234 4 5 G G SS 23 MOS1 SS 67 MOS2 REJ03G1171-0300 (Previous: ADE-208-660A) Rev.3.00 Sep 07, 2005 1, 8 2, 3, 6, 7 4, 5 Drain Source Gate Rev.3.00 Sep 07, 2005 page 1 of 7 HAT2050T Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 100 VGSS ±20 Drain current Drain peak current ID 1 ID (pulse) Note 1 4 Body-drain diode reverse drain current IDR 1 Channel dissipation Pch Note 2 1.0 Channel dissipation Pch Note 3 1.
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