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HAF2017S Datasheet, Renesas

HAF2017S fet equivalent, silicon n-channel power mos fet.

HAF2017S Avg. rating / M : 1.0 rating-11

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HAF2017S Datasheet

Features and benefits


* Logic level operation (4 to 6 V Gate drive)
* High endurance capability against to the short circuit
* Built-in the over temperature shutdown circuit
* .

Description

This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction te.

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TAGS

HAF2017S
Silicon
N-Channel
Power
MOS
FET
HAF2017
HAF2017L
HAF2011
Renesas

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