H5N2509P Overview
H5N2509P Silicon N Channel MOS FET High Speed Power Switching.
H5N2509P Key Features
- Low on-resistance: R DS (on) = 0.053 Ω typ
- Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
- High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
- Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)
- Avalanche ratings
