H5N2509P Datasheet | Renesas

Key Features

• Low on-resistance: R DS (on) = 0.053 Ω typ
• Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
• High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
• Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)
• Drain (Flange)