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FX20ASJ-03F - P-channel Power MOS FET

Key Features

  • Drive voltage : 4 V.
  • VDSS :.
  • 30 V.
  • rDS(ON) (max) : 0.12 Ω.
  • ID :.
  • 20 A Outline.

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FX20ASJ-03F High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 3 12 3 1 2, 4 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –30 ±20 –20 – 40 –5 –20 – 40 25 – 55 to +150 – 55 to +150 0.32 REJ03G0248-0200 Rev.2.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4.