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FS5ASJ-06F - N-channel Power MOS FET

Features

  • Drive voltage : 4 V.
  • VDSS : 60 V.
  • rDS(ON) (max) : 140 mΩ.
  • ID : 5 A.
  • Recovery Time of the Integrated Fast Recovery Diode (TYP. ) : 30 ns Outline.

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Other Datasheets by Renesas

Part Number Description
FS50ASJ-03F N-channel MOSFET

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FS5ASJ-06F High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 140 mΩ • ID : 5 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulse) Avalanche current (Pulse) Source current Source current (Pulse) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 60 ±20 5 20 5 5 20 15 – 55 to +150 – 55 to +150 0.32 REJ03G0239-0200 Rev.2.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4.
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