Datasheet4U.com

F1129LB - RF Amplifier

Renesas

📥 Download Datasheet

F1129LB Datasheet Preview — Preview of F1129LB PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	F1129LB
Manufacturer	Renesas ↗
File Size	1.30 MB
Description	RF Amplifier
Datasheet	F1129LB-Renesas.pdf

F1129LB Product details

Description

The F1129LB is a single-ended input / differential output 1.4GHz to 3.2GHz high gain RF amplifier.

Features

RF range: 1.4GHz to 3.2GHz.
Gain = 20dB typical at 2.5GHz.
Noise figure = 1.6dB typical at 2.5GHz.
OIP3 = +36dBm typical at 2.5GHz.
Output P1dB = +20.5dBm typical at 2.5GHz.
Gain variation over temperature = ±0.2dB typical.
50Ω single-ended input impedance.
100Ω differential output impedance.
3.3V or 5V power supply.
ICC = 61mA at 5V.
1.4mA standby current.
1.8V and 3.3V logic support for STBY control.
Operating temperature (TEP).

📁 F1129LB Similar Datasheet

F1120 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F1100 - RF to IF Dual Downconverting Mixer (Integrated Device Technology)
F1100C - 5V FR-4 Surface Mount Crystal Clock Oscillators (Champion)
F1100E - 5.0V TTL CLOCK OSCILLATOR (Fox Electronics)
F1102NBGI - RF to IF Dual Downconverting Mixer (IDT)
F1107 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F1108 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F1116 - RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

Other Datasheets by Renesas

F1129 - RF Amplifier
F1129MB - RF Amplifier

Published: May 19, 2020 |