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Renesas Electronics Components Datasheet

CR02AM-8 Datasheet

Thyristor

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CR02AM-8
Thyristor
Low Power Use
Features
IT (AV) : 0.3 A
VDRM : 400 V
IGT : 100 µA
Outline
REJ03G0542-0100
Rev.1.00
Mar.28.2005
Planar Passivation Type
Completed Pb free product
RENESAS Package code: PRSS0003DE-A
(Package name: TO-92(3))
2
321
3
1
1. Cathode
2. Anode
3. Gate
Applications
Solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic
equipment, strobe flasher, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
8
400
500
320
400
320
Unit
V
V
V
V
V
Rev.1.00, Mar.28.2005, page 1 of 7


Renesas Electronics Components Datasheet

CR02AM-8 Datasheet

Thyristor

No Preview Available !

CR02AM-8
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
0.47
0.3
Surge on-state current
I2t for fusing
ITSM
10
I2t 0.4
Peak gate power dissipation
PGM
0.1
Average gate power dissipation
PG (AV)
0.01
Peak gate forward voltage
VFGM
6
Peak gate reverse voltage
VRGM
6
Peak gate forward current
IFGM
0.1
Junction temperature
Tj – 40 to +125
Storage temperature
Tstg – 40 to +125
Mass
— 0.23
Notes: 1. With gate to cathode resistance RGK = 1 k.
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
180° conduction, Ta = 30°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
0.1 mA Tj = 125°C, VRRM applied
Repetitive peak off-state current
IDRM
0.1 mA Tj = 125°C, VDRM applied,
RGK = 1 k
On-state voltage
VTM — — 1.6 V Ta = 25°C, ITM = 0.6 A,
instantaneous value
Gate trigger voltage
VGT — — 0.8 V Tj = 25°C, VD = 6 V,
IT = 0.1 ANote3
Gate non-trigger voltage
Gate trigger current
VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 k
IGT 20 — 100Note2 µA Tj = 25°C, VD = 6 V,
IT = 0.1 ANote3
Holding current
IH
——
3 mA Tj = 25°C, VD = 12 V,
RGK = 1 k
Thermal resistance
Rth (j-a)
— 180 °C/W Junction to ambient
Notes: 2. If special values of IGT are required, choose item E from those listed in the table below if possible.
Item
B
E
IGT (µA)
20 to 50 20 to 100
The above values do not include the current flowing through the 1 kresistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
60
A1
IGS IGT
TUT
A3 A2
3V
DC
RGK
1
V1
2
6V
DC
1kVGT
Switch
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1k)
Rev.1.00, Mar.28.2005, page 2 of 7


Part Number CR02AM-8
Description Thyristor
Maker Renesas
PDF Download

CR02AM-8 Datasheet PDF






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