C5508 transistor equivalent, npn silicon rf transistor.
* Ideal for low-noise, high-gain amplification applications
* NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* Maximum available power ga.
* NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* Maximum available power gain: MAG = 19 d.
Image gallery
TAGS
Download (Size : 246.24KB)