The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK3160
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =130 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1085-0300 (Previous: ADE-208-751A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source
12 3
S
Rev.3.00 Sep 07, 2005 page 1 of 7
2SK3160
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3.
2SK3160 Datasheet
