2SK3160
Features
- Low on-resistance RDS =130 mΩ typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1085-0300 (Previous: ADE-208-751A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
G 1. Gate 2. Drain 3. Source
12 3
Rev.3.00 Sep 07, 2005 page 1 of 7
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note3 EAR Note3 Pch Note2
Tch
Tstg
Ratings 200 ±20 10 40 10 10 6.6 30 150
- 55 to +150
(Ta = 25°C)
Unit V V A A A A m J W
°C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage...
