• Part: 2SK3155
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 79.99 KB
Download 2SK3155 Datasheet PDF
Renesas
2SK3155
2SK3155 is N-Channel MOSFET manufactured by Renesas.
Features - Low on-resistance RDS = 100 mΩ typ. - High speed switching - 4 V gate drive device can be driven from 5 V source Outline REJ03G1080-0500 (Previous: ADE-208-768C) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) G 1. Gate 2. Drain 3. Source 12 3 Rev.5.00 Sep 07, 2005 page 1 of 7 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 150 ±20 15 60 15 15 16 30 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS...