The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK2554
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1016-0600 (Previous: ADE-208-359D)
Rev.6.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate G 2. Drain
(Flange) 3. Source
1 2 3
S
Rev.6.00 Sep 07, 2005 page 1 of 7
2SK2554
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3.
2SK2554 Datasheet
