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N MOS UHF TV
MOS Silicon Power MOS Field Effect Transistor
2SK2396A
UHF
PO = 100 W, GL = 12 dB, h D = 50
TYP
VDD = 30 V, f = 860 MHz, IDQ = 150 mA 2, Pin = 40 dBm
f = 470 860 MHz
Unit mm
TA = 25
D.C.
VDS VGS ID PT Rth Tch Tstg
60 7 15 290 0.6 200 65 200
V V A W /W
TA = 25
IGSS VGS off IDSS gm PO hD GL
VGS = 7 V VDS = 5 V, ID = 50 mA VDS= 60 V VDS = 5 V, ID = 3 A, D ID = 100 mA f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 40 dBm f = 860 MHz, VDD = 30 V IDQ = 150 mA 2, Pin = 30 dBm
MIN.
1.5
2.0 90 48 10
TYP.
100 50 12
MAX. 1 4 2
mA V mA S W
dB
P12404JJ1V0DS00 February 1997 N
1
1997
2SK2396A
2
2SK2396A
ZIN
VDD = 30 V, IDQ = 150 mA 2, Pin = 40 dBm
f MHz
Zin W
470 2.4 j2.7
550 2.5 j2.4
650 6.2 j4.2
750 10.8 j1.5
860 5.6 j4.
2SK2396A Datasheet
