2SK1697 - Silicon N-Channel MOS FET

Renesas

Key Features

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device can be driven from 5 V source.
Suitable for DC.
DC converter, motor drive, power switch, solenoid drive REJ03G1373-0200 (Previous: ADE-208-1313) Rev.2.00 May 11, 2006 Outline.

2SK1697 silicon n-channel mos fet by Renesas - Datasheet Preview

Datasheet Details

Part number	2SK1697
Manufacturer	Renesas
File Size	59.17 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK1697 Datasheet

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2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC – DC converter, motor drive, power switch, solenoid drive REJ03G1373-0200 (Previous: ADE-208-1313) Rev.2.00 May 11, 2006 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 21 3 4 Note: Marking is “EY”. D G S 1. Gate 2. Drain 3. Source 4. Drain *UPAK is a trademark of Renesas Technology Corp.