2SK1482 Datasheet N-channel MOSFET

Manufacturer: Renesas

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR.

Datasheet Details

Part number	2SK1482
Manufacturer	Renesas
File Size	131.65 KB
Description	N-Channel MOSFET
Datasheet	2SK1482-Renesas.pdf

General Description

The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply.

The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.

Key Features

Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A).
Voltage drive at logic level (VGS = 4 V) is possible.
Bidirectional zener diode for protection is incorporated in between the gate and the source.
Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source.
Can be used complementary with the 2SJ196.

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