Datasheet4U Logo Datasheet4U.com

2SK1482 - N-Channel MOSFET

Description

The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply.

The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.

Features

  • Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A).
  • Voltage drive at logic level (VGS = 4 V) is possible.
  • Bidirectional zener diode for protection is incorporated in between the gate and the source.
  • Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source.
  • Can be used complementary with the 2SJ196.

📥 Download Datasheet

Datasheet preview – 2SK1482

Datasheet Details

Part number 2SK1482
Manufacturer Renesas
File Size 131.65 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK1482 Datasheet
Additional preview pages of the 2SK1482 datasheet.

📁 Similar Datasheet

  • 2SK1482 - N-Channel MOSFET (NEC)
  • 2SK1483 - N-CHANNEL MOS FET (NEC)
  • 2SK1483 - MOS Field Effect Transistor (Kexin)
  • 2SK1484 - N-CHANNEL MOS FET (NEC)
  • 2SK1485 - N-Channel MOSFET (NEC)
  • 2SK1486 - N-CHANNEL MOS TYPE TRANSISTOR (Toshiba Semiconductor)
  • 2SK1486 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK1487 - Transistor (Toshiba)
  • 2SK1487 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK1488 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays. FEATURES • Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Voltage drive at logic level (VGS = 4 V) is possible. • Bidirectional zener diode for protection is incorporated in between the gate and the source.
Published: |