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2SJ552L - P-Channel MOSFET

Download the 2SJ552L datasheet PDF. This datasheet also covers the 2SJ552 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005

Features

  • Low on-resistance RDS (on) = 0.042 Ω typ.
  • Low drive current.
  • 4 V gate drive devices.
  • High speed switching. Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SJ552-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SJ552L
Manufacturer Renesas
File Size 89.77 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ552L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ552L Silicon P-Channel MOSFET Hitachi Semiconductor
2SJ552 Silicon P-Channel MOSFET Hitachi Semiconductor
2SJ552S Silicon P-Channel MOSFET Hitachi Semiconductor
2SJ550 Silicon P-Channel MOSFET Hitachi Semiconductor
2SJ550L Silicon P-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Renesas

Part Number Description
2SJ552 P-Channel MOSFET
2SJ552S P-Channel MOSFET
2SJ550 P-Channel MOSFET
2SJ550L P-Channel MOSFET
2SJ550S P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 D 1 23 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Sep 07, 2005 page 1 of 8 2SJ552(L), 2SJ552(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
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