The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SJ221
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device
Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D
123
G S
REJ03G0851-0200 (Previous: ADE-208-1185)
Rev.2.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
2SJ221
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
2SJ221 Datasheet
