logo

2SD1164-Z Datasheet, Renesas

2SD1164-Z transistor equivalent, silicon power transistor.

2SD1164-Z Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 1.77MB)

2SD1164-Z Datasheet
2SD1164-Z Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 1.77MB)

2SD1164-Z Datasheet

Features and benefits


* High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Description

R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES
* High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTI.

Image gallery

2SD1164-Z Page 1 2SD1164-Z Page 2 2SD1164-Z Page 3

TAGS

2SD1164-Z
SILICON
POWER
TRANSISTOR
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

Related datasheet

2SD1160

2SD1162

2SD1163

2SD1163A

2SD1165A

2SD1166

2SD1168

2SD1169

2SD110

2SD1101

2SD1105

2SD111

2SD1110

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts