2SC5753 transistor equivalent, npn silicon rf transistor.
* Ideal for medium output power amplification
* PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
* HFT3 technology (fT = 12 GHz) adopted
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