2SC5509 transistor equivalent, npn silicon rf transistor.
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* Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gai.
Summary First edition issued Renesas format is applied to .
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