2SC5508 Datasheet - Renesas

2SC5508 NPN SILICON RF TRANSISTOR

Summary First edition issued Renesas format is applied to this data sheet. ORDERING INFORMATION is modified. Up to date S-PARAMETERS. .

2SC5508 Features

* Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4

2SC5508_Renesas.pdf