2SC5508 transistor equivalent, npn silicon rf transistor.
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* Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum availa.
NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE.
Summary First edition issued Renesas format is applied to this data sheet. ORDERING INFORMATION is modified. Up to date S-PARAMETERS. .
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