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2SC5508 - NPN SILICON RF TRANSISTOR

General Description

Summary First edition issued Renesas format is applied to this data sheet.

ORDERING INFORMATION is modified.

Up to date S-PARAMETERS.

Key Features

  • Ideal for low-noise, high-gain amplification.

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Datasheet Details

Part number 2SC5508
Manufacturer Renesas
File Size 246.24 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet 2SC5508 Datasheet

Full PDF Text Transcription for 2SC5508 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SC5508. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0055EJ0200 Rev.2.00 Ma...

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-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FEATURES • • • • • Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP.