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2SC3356 Datasheet

NPN Silicon Rf Transistor

Manufacturer: Renesas

Datasheet Details

Part number 2SC3356
Manufacturer Renesas
File Size 176.69 KB
Description NPN Silicon RF Transistor
Datasheet 2SC3356-Renesas.pdf

2SC3356 Overview

PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold Jun 28, 2011.

2SC3356 Key Features

  • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
  • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
  • 8 mm wide embossed taping
  • Pin 3 (Collector) face the perforation side of the tape

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