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2SC3356 - NPN Silicon RF Transistor

2SC3356 Description

PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Ampl.
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2SC3356 Features

* Low noise and high gain : NF = 1.1 dB TYP. , Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
* High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantit

2SC3356 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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