2SC3356 transistor equivalent, npn silicon rf transistor.
* Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
* High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f .
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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Previous No. :PU10209EJ02V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION
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