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2SC3356 - NPN Silicon RF Transistor

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Key Features

  • Low noise and high gain : NF = 1.1 dB TYP. , Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz.
  • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz.

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Datasheet Details

Part number 2SC3356
Manufacturer Renesas
File Size 176.69 KB
Description NPN Silicon RF Transistor
Datasheet download datasheet 2SC3356 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold Jun 28, 2011 FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantity 3-pin Minimold 50 pcs (Non reel) (Pb-Free) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs.