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2SC2570A - NPN EPITAXIAL SILICON RF TRANSISTOR

General Description

The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges.

Key Features

  • Low noise and high gain : NF = 1.5 dB TYP. , Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz.
  • Wide dynamic range : NF = 1.9 dB TYP. , Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz.

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Datasheet Details

Part number 2SC2570A
Manufacturer Renesas
File Size 179.97 KB
Description NPN EPITAXIAL SILICON RF TRANSISTOR
Datasheet download datasheet 2SC2570A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz • Wide dynamic range : NF = 1.9 dB TYP., Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC2570A 2SC2570A-T Quantity 500 pcs (Non reel) 2.5 kpcs/box (Box type) Supplying Form • 18 mm wide radial taping • Supplying paper tape with in a box Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 500 pcs.