RM2N650IP datasheet, ii equivalent, Rectron

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 665.00KB)

Features and benefits

ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanch.

Application

Features ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low.

Description

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap.

Image gallery