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50N150 - N-Channel Super Trench Power MOSFET

Description

The RM50N150DF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • ƽ VDS =150V,ID =50A RDS(ON).

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Datasheet Details

Part number 50N150
Manufacturer Rectron
File Size 235.80 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet 50N150 Datasheet

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RM50N150DF N-Channel Super Trench Power MOSFET Description The RM50N150DF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.