Datasheet Summary
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Preliminary
256Kb Bytewide 5V F-RAM Memory
Features
256Kbit Ferroelectric Nonvolatile RAM
- Organized as 32,768 x 8 bits
- High Endurance 1 Trillion (1012) Read/Writes
- 38 year Data Retention (@ +75°C)
- NoDelay™ Writes
- Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules
- No Battery Concerns
- Monolithic Reliability
- True Surface Mount Solution, No Rework Steps
- Superior for Moisture, Shock, and Vibration
- Resistant to Negative Voltage Undershoots SRAM & EEPROM patible
- JEDEC 32Kx8 SRAM & EEPROM pinout
- 70 ns Access Time
- 130 ns Cycle Time Low Power Operation
- 15 mA Active Current
- 25 µA (typ.) Standby Current Industry...
