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I5N60 Datasheet, ROUM

I5N60 mosfet equivalent, 5a 600v n-channel enhancement mode power mosfet.

I5N60 Avg. rating / M : 1.0 rating-13

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I5N60 Datasheet

Features and benefits


* Fast Switching
* Low ON Resistance(Rdson≤1.7Ω)
* Low Gate Charge(Typical:19.5nC)
* Low Reverse Transfer Capacitances(Typical:7.5pF)
* 100% Single Pu.

Application


* used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circu.

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) (TYP)= .

Image gallery

I5N60 Page 1 I5N60 Page 2 I5N60 Page 3

TAGS

I5N60
600V
N-channel
Enhancement
Mode
Power
MOSFET
I5062-ZD
I5068-Z
I5100
ROUM

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