FD7509 Datasheet, ROUM

* Low On Resistance
* Low Gate Charge
* Fast Switching
* Low Reverse Transfer Capacitances
* 100% Single Pulse Avalanche Energy Test
* 100% ΔVDS T.

* AC-DC Switching Power
* Pulse Width Modulation Circuit
* Load Switching
* Inverter VDS = 75V RDS(on) .

These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features
* Low On Resistance
* Low Gate Charge
* Fast Switching <.