F20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET

General Description

These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F.

Which accords with the RoHS standard.

Key Features

Fast Switching.
Low On Resistance(Rdson≤0.45Ω).
Low Gate Charge(Typical:61nC).
Low Reverse Transfer Capacitances(Typical:20pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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F20N60 20a 600v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	F20N60
Manufacturer	ROUM
File Size	1.13 MB
Description	20A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	F20N60 Datasheet

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 0.36Ω ID = 20A 2 Features ● Fast Switching ● Low On Resistance(Rdson≤0.45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Application ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of adaptor and charger. TO-220C TO-220F TO-3PN 4 Electrical Characteristics 4.