B8NE60 mosfet equivalent, 7.5a 600v n-channel enhancement mode power mosfet.
* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤1.3Ω)
* Low Gate Charge(Typical Data:24nC)
* Low Reverse Transfer Capacitances(Ty.
* Used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circu.
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
VDSS = 600V RDS(on) （TYP)= .
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