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LED18FC-PR - Mid-Infrared Light Emitting Diode

Key Features

  • Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design.
  • Peak Wavelength: typ. 1.85 µm.
  • Optical Ouput Power: typ. 0.9 mW qCW.
  • Package: TO-18, with PR and without window Specifications Item Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature Package Condition T=300 K 150 mA CW 200 mA qCW Min. 1.80 100 0.7 Rating Typ. 1.85 150 0.9 Max. 1.89 200 1.4 Unit µm nm mW.

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Datasheet Details

Part number LED18FC-PR
Manufacturer ROITHNER
File Size 325.80 KB
Description Mid-Infrared Light Emitting Diode
Datasheet download datasheet LED18FC-PR Datasheet

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Full PDF Text Transcription (Reference)

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LED18FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.85 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. LED18FC-PR has a stable ouput power and a lifetime more then 80000 hours. Features • Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design • Peak Wavelength: typ. 1.85 µm • Optical Ouput Power: typ. 0.