LED17FC - Mid-Infrared Light Emitting Diode

Features

• Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design.
• Peak Wavelength: typ. 1.75 µm.
• Optical Ouput Power: typ. 1.2 mW qCW.
• Package: TO-18, with cap and window Specifications Item Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature Package Condition T=300 K 150 mA CW 200 mA qCW Min. 1.70 100 0.8 Rating Typ. 1.75 150 1.2 Max. 1.79 200 2 Unit µm nm mW 1 A 20.