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LED16FC - Mid-Infrared Light Emitting Diode

Key Features

  • Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design.
  • Peak Wavelength: typ. 1.65 µm.
  • Optical Ouput Power: typ. 1.2 mW qCW.
  • Package: TO-18, with cap and window Specifications Item Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature Package Condition T=300 K 150 mA CW 200 mA qCW Min. 1.60 100 0.8 Rating Typ. 1.65 150 1.2 Max. 1.69 200 2 Unit µm nm mW 1 A 20.

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Datasheet Details

Part number LED16FC
Manufacturer ROITHNER
File Size 264.78 KB
Description Mid-Infrared Light Emitting Diode
Datasheet download datasheet LED16FC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LED16FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. LED16FC has a stable ouput power and a lifetime more then 80000 hours. Features • Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design • Peak Wavelength: typ. 1.65 µm • Optical Ouput Power: typ. 1.