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Rohm Semiconductor Electronic Components Datasheet

D1760 Datasheet

2SD1760

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Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
2SD1760 / 2SD1864
!Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
!Structure
Epitaxial planar type
NPN silicon transistor
!External dimensions (Units : mm)
2SD1760
6.5±0.2
5.1
+0.2
0.1
C0.5
2.3
+0.2
0.1
0.5±0.1
2SD1864
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
0.55±0.1
1.0±0.2
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector power 2SD1760
dissipation
2SD1864
IC
PC
3 A (DC)
4.5 A (Pulse) 1
15 W (Tc=25°C)2
1W
Junction temperature
Tj 150 °C
Storage temperature
Tstg 55~+150 °C
1 Single pulse, PW=100ms
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.


Rohm Semiconductor Electronic Components Datasheet

D1760 Datasheet

2SD1760

No Preview Available !

www.DataSheet4U.com
Transistors
2SD1760 / 2SD1864
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
Min.
60
50
5
82
Typ.
0.5
90
40
Max.
1
1
1
390
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=40V
VEB=4V
IC/IB=2A/0.2A
VCE=3V, IC=0.5A
VCE=5V, IE=−500mA, f=30MHz
VCB=10V, IE=0A, f=1MHz
!Packaging specifications and hFE
Type
Package
Code
Basic ordering
hFE unit (pieces)
Taping
TL TV2
2500
2500
2SD1760
2SD1864
PQR
PQR
hFE values are classified as follows:
Item
hFE
P
82~180
Q
120~270
R
180~390
!Electrical characteristic curves
10
VCE = 3V
5
2
Ta = 100°C
1 25°C
0.5 25°C
0.2
0.1
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
3.0
Ta = 25°C
45mA
2.5
50mA
2.0
1.5
1.0
40mA
35mA
30mA
25mA
20mA
15mA
10mA
5mA
0.5
0 IB = 0mA
0 12345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
3.0 50mA
45mA
40mA
2.5 35mA
30mA
25mA
2.0 20mA
15mA
Ta = 25°C
1.5
10mA
1.0
IB = 5mA
0.5
PC = 15W
0
0 10 20 30 40 50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded-emitter output
characteristics( ΙΙ )
1000
500
Ta = 25°C
200
VCE = 5V
100
50
3V
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current( Ι )
1000
500
VCE = 3V
200 Ta = 100°C
100
50 25°C
25°C
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1
2
5 10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain vs.
collector curren( ΙΙ )
10
Ta = 25°C
5
2
1
0.5
0.2
IC/IB = 50
0.1
20
0.05 10
0.02
0.01
0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current


Part Number D1760
Description 2SD1760
Maker ROHM Electronics
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D1760 Datasheet PDF






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