900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Rohm Semiconductor Electronic Components Datasheet

UMH3NFHA Datasheet

Dual digital transistor

No Preview Available !

UMH3N FHA
General purpose (Dual digital transistor)
Datasheet
AEC-Q101 Qualified
Parameter
VCEO
IC
R1
 
DTr1 and DTr2
50V
100mA
4.7kΩ
 
lFeatures
1)Two DTC143T chips in a UMT6 package.
2)Mounting possible with UMT3 automatic
  mounting machines.
3)Transistor elements are independent,
  eliminating interference.
4)Mounting cost and area can be cut in half.
lOutline
SOT-363
 
SC-88
 
 
 
UMT6
              
lInner circuit
 
 
lApplication
INVERTER, INTERFACE, DRIVER
lPackaging specifications
Part No.
Package
Package
size
UMH3N FHA
SOT-363
(UMT6)
2021
                                          
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
TN 180
8
3000
H3
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
20161012 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

UMH3NFHA Datasheet

Dual digital transistor

No Preview Available !

UMH3N FHA
 
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1*2
Tj
Tstg
Values
50
50
5
100
150
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = 50μA
VCB = 50V
VEB = 4V
IC = 5mA, IB = 250μA
VCE = 5V, IC = 1mA
-
Transition frequency
f
*3
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference land
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
50 - - V
50 - - V
5- -V
- - 500 nA
- - 500 nA
- - 300 mV
100 250 600 -
3.29 4.7 6.11 kΩ
- 250 - MHz
                                            
 
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/4
                                        
20161012 - Rev.001


Part Number UMH3NFHA
Description Dual digital transistor
Maker ROHM
PDF Download

UMH3NFHA Datasheet PDF






Similar Datasheet

1 UMH3NFHA Dual digital transistor
ROHM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy