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Rohm Semiconductor Electronic Components Datasheet

UMD3NFHA Datasheet

NPN + PNP Complex Digital Transistors

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EEMMDD33FH/ AU/MUDM3DN3N/FIHMAD/3IMAD3AFRA
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
AEC-Q101 Qualified
<For DTr1(NPN)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
50V
100mA
10kW
10kW
lOutline
EMT6
(6)
(5)
(4)
(1)
(2)
(3)
EMEDM3DF3HA
(SC-107C)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMUDM3DN3FNHA
SOT-363 (SC-88)
<For DTr2(PNP)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
-50V
-100mA
10kW
10kW
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMDIM3DA3FARA
SOT-457 (SC-74)
lFeatures
1) Both the DTC114E chip and DTA114E chip
in one package.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Part No.
Package
EMD3FHA
UMD3NNFHA
IMD3AAFRA
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
lInner circuit
OUT
(6)
IN
(5)
GND
(4)
DTr1
R1 R2
R2 R1
DTr2
(1)
GND
(2)
IN
(3)
OUT
EMDE3MFHDA3 //UUMMDD3N3NFHA
OUT
IN
GND
(4) (5)
(6)
DTr2
R1 R2
R2 R1
DTr1
(3)
GND
(2)
IN
IMDIM3DAF3RAA
(1)
OUT
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
D3
D3
D3
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/8
2013.07 - Rev.E


Rohm Semiconductor Electronic Components Datasheet

UMD3NFHA Datasheet

NPN + PNP Complex Digital Transistors

No Preview Available !

EMD3F/HUAM/DU3MND/ 3IMNDFH3AA / IMD3AFRA
lAbsolute maximum ratings (Ta = 25C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EEMMDD3F3H/AU/ MUMDD33NNFHA
IIMMDD33AAFRA
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
DTr1(NPN) DTr2(PNP)
50 -50
-10 to +40 -40 to +10
50 -50
100 -100
150 (Total)*3
300 (Total)*4
150
-55 to +150
Unit
V
V
mA
mA
mW
mW
°C
°C
lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 10mA
IO / II = 10mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
Transition frequency
fT *1
VCE = 10V, IE = -5mA
f = 100MHz
Min.
-
3.0
-
-
-
30
7
0.8
-
Typ.
-
-
0.1
-
-
-
10
1
250
Max.
0.5
-
0.3
0.88
0.5
-
13
1.2
-
Unit
V
V
mA
mA
-
kW
-
MHz
lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -100mA
VO = -0.3V, IO = -10mA
IO / II = -10mA / -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -5mA
-
-
Transition frequency
fT *1
VCE = -10V, IE = 5mA
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min.
-
-3.0
-
-
-
30
7
0.8
-
Typ. Max. Unit
- -0.5
V
--
-0.1 -0.3
V
- -0.88 mA
- -0.5 mA
---
10 13 kW
1 1.2 -
250 - MHz
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/8
2013.07 - Rev.E


Part Number UMD3NFHA
Description NPN + PNP Complex Digital Transistors
Maker ROHM
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UMD3NFHA Datasheet PDF






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