SH8K10S
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
Datasheet
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V(BR)DSS
Tr2
ΔV(BR)DSS Tr1
ΔTj Tr2
VGS = 0V, ID = 1mA
VGS = 0V, ID = 1mA
ID = 1mA, referenced to 25℃
ID = 1mA, referenced to 25℃
Zero gate voltage
drain current
IDSS Tr1 VDS = 30V, VGS = 0V
Tr2 VDS = 30V, VGS = 0V
Gate - Source
leakage current
IGSS Tr1 VDS = 0V, VGS = ±20V
Tr2 VDS = 0V, VGS = ±20V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
VGS(th)
Tr1
Tr2
ΔVGS(th) Tr1
ΔTj Tr2
VDS = 10V, ID = 1mA
VDS = 10V, ID = 1mA
ID = 1mA, referenced to 25℃
ID = 1mA, referenced to 25℃
VGS = 10V, ID = 7.0A
Tr1 VGS = 4.5V, ID = 7.0A
Static drain - source
on - state resistance
RDS(on)*4
VGS = 4.0V, ID = 7.0A
VGS = 10V, ID = 8.5A
Tr2 VGS = 4.5V, ID = 8.5A
VGS = 4.0V, ID = 8.5A
Forward Transfer
Admittance
|Yfs|*4 Tr1 VDS = 10V, ID = 7.0A
Tr2 VDS = 10V, ID = 8.5A
*1 Pw ≦ 10μs, Duty cycle ≦ 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a Cu board (25×25×0.8mm)
*4 Pulsed
Values
Unit
Min. Typ. Max.
30 - -
V
30 - -
- 29 -
mV/℃
- 29 -
- -1
μA
- - 500
- - ±10
μA
- - ±10
1.0 - 2.5
V
1.0 - 2.5
- -1.6 -
mV/℃
- -1.6 -
- 17.0 24.0
- 23.0 33.0
- 25.0 35.0
mΩ
- 14.0 19.6
- 17.8 24.9
- 19.0 26.6
5.0 - -
S
8.0 - -
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20190527 - Rev.003
