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Rohm Semiconductor Electronic Components Datasheet

SCT3120ALHR Datasheet

Automotive Grade N-channel SiC power MOSFET

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SCT3120ALHR
Automotive Grade N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID*1
PD
650V
120mΩ
21A
103W
lOutline
TO-247N
lInner circuit
(1)(2)(3)
lFeatures
1) Qualified to AEC-Q101
2) Low on-resistance
3) Fast switching speed
4) Fast reverse recovery
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
lApplication
Automobile
Switch mode power supplies
(1) Gate
(2) Drain
(3) Source
*Body Diode
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C11
SCT3120AL
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C
Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300nsec)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
650
21
15
52
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50211-SCT3120ALHR
16.Nov.2018 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

SCT3120ALHR Datasheet

Automotive Grade N-channel SiC power MOSFET

No Preview Available !

SCT3120ALHR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
VGS = 0V, ID = 1mA
V(BR)DSS Tj = 25°C
Tj = -55°C
650 -
650 -
-
-
Zero Gate voltage
Drain current
VGS = 0V, VDS =650V
IDSS Tj = 25°C
Tj = 150°C
-
-
1 10
2-
Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V
-
- 100
Gate - Source leakage current IGSS- VGS = -4V , VDS = 0V
-
- -100
Gate threshold voltage
VGS (th) VDS = 10V, ID = 3.33mA 2.7 - 5.6
Static Drain - Source
on - state resistance
VGS = 18V, ID = 6.7A
RDS(on) *5 Tj = 25°C
Tj = 150°C
- 120 156
- 172 -
Gate input resistance
RG f = 1MHz, open drain - 18 -
Unit
V
μA
nA
nA
V
Ω
lThermal resistance
Parameter
Thermal resistance, junction - case
Symbol
RthJC
Values
Min. Typ. Max.
- 1.12 1.46
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 1.11E-01
Rth2
7.09E-01
K/W
Rth3 3.01E-01
Symbol
Cth1
Cth2
Cth3
Value
8.73E-04
5.10E-03
2.94E-02
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50211-SCT3120ALHR
16.Nov.2018 - Rev.001


Part Number SCT3120ALHR
Description Automotive Grade N-channel SiC power MOSFET
Maker ROHM
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