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Rohm Semiconductor Electronic Components Datasheet

SCT3022KL Datasheet

N-channel SiC power MOSFET

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SCT3022KL
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
22mW
95A
427W
lOutline
TO-247N
lInner circuit
(1)(2)(3)
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C11
SCT3022KL
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25°C
Tc = 100°C
Gate - Source voltage (DC)
Gate-Source Surge Voltage (tsurge < 300nsec)
Recommended Drive Voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
1200
95
67
237
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50211-SCT3022KL
14.Jun.2018 - Rev.005


Rohm Semiconductor Electronic Components Datasheet

SCT3022KL Datasheet

N-channel SiC power MOSFET

No Preview Available !

SCT3022KL
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC
Values
Min. Typ. Max.
- 0.27 0.35
Unit
C/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
VDS = 1200V, VGS = 0V
IDSS Tj = 25°C
Tj = 150°C
IGSS+ VGS = +22V, VDS = 0V
IGSS- VGS = -4V, VDS = 0V
VGS (th) VDS = 10V, ID = 18.2mA
VGS = 18V, ID = 36A
RDS(on) *5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
-
-
-
-
2.7
-
-
-
1 10
2-
- 100
- -100
- 5.6
22 28.6
33 -
4-
Unit
V
mA
nA
nA
V
mW
W
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50211-SCT3022KL
14.Jun.2018 - Rev.005


Part Number SCT3022KL
Description N-channel SiC power MOSFET
Maker ROHM
PDF Download

SCT3022KL Datasheet PDF






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