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SCS302AP
SiC Schottky Barrier Diode
VR 650V IF 2A QC 6nC
Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability
Construction Silicon carbide epitaxial planar type
Outline
TO-220ACP
(1)
Datasheet
Inner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
Packaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Packing code
Marking
Tube 50 C9
SCS302AP
Absolute maximum ratings (Tj = 25°C) Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Continuous forward current
(Tc= 145°C)
IF
Surge nonrepetitive forward current
PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C
Repetitive peak for
SCS302AP Datasheet
