S6307 Datasheet | ROHM

Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible - Inner Circuit - Construction Silicon carbide epitaxial planar type Schottky diode - Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak) VRM 1200 Reverse voltage (DC) VR 1200 Continuous forward current IF 30 Surge nonrepetitive forward current i2t value PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C IFSM - 2 ∫i2d- t2 190 140 780 195 109 Junction temperature Tj 175 Range of storage temperature Tstg - 55 to 175 - 1 Limited by Tj - 2 Assumes Zth(j-a) of 0.36 °C/W or less. (Pulse Width = 8.3ms) Unit V V A A A A A2s A2s °C °C .rohm. © 2017 ROHM Co., Ltd. All rights reserved. 1/4 - Rev.A - Electrical characteristics (Tj =...