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Rohm Semiconductor Electronic Components Datasheet

S6307 Datasheet

SiC Schottky Barrier Diode

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S6307
SiC Schottky Barrier Diode
VR 1200V
IF 30A*1
QC 82nC
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
Inner Circuit
Construction
Silicon carbide epitaxial planar type
Schottky diode
Datasheet
Absolute Maximum Ratings (Tj = 25°C )
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
VRM 1200
Reverse voltage (DC)
VR 1200
Continuous forward current
IF 30
Surge non-
repetitive forward
current
i2t value
PW=10ms sinusoidal, Tj=25°C
PW=10ms sinusoidal, Tj=150°C
PW=10s square, Tj=25°C
1PW10ms, Tj=25°C
1PW10ms, Tj=150°C
IFSM *2
i2d*t2
190
140
780
195
109
Junction temperature
Tj 175
Range of storage temperature
Tstg 55 to 175
*1 Limited by Tj *2 Assumes Zth(j-a) of 0.36 °C/W or less. (Pulse Width = 8.3ms)
Unit
V
V
A
A
A
A
A2s
A2s
°C
°C
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/4
2017.12 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

S6307 Datasheet

SiC Schottky Barrier Diode

No Preview Available !

S6307
Datasheet
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
DC blocking voltage
Forward voltage
Reverse current
Total capacitance
Total capacitive charge
Switching time
VDC IR =0.6mA
IF=30A,Tj=25°C
VF IF=30A,Tj=150°C
IF=30A,Tj=175°C
VR=1200V,Tj=25°C
IR VR=1200V,Tj=150°C
VR=1200V,Tj=175°C
VR=1V,f=1MHz
C
VR=800V,f=1MHz
QC VR=800V,di/dt=500A/s
tC VR=800V,di/dt=500A/s
Min.
1200
-
-
-
-
-
-
-
-
-
-
Values
Typ.
-
1.4
1.8
1.9
30
240
390
1600
130
82
27
Max.
-
1.6
-
-
600
-
-
-
-
-
-
Unit
V
V
V
V
A
A
A
pF
pF
nC
ns
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/4
2017.12 - Rev.A


Part Number S6307
Description SiC Schottky Barrier Diode
Maker ROHM
PDF Download

S6307 Datasheet PDF






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