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S6307 - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible.
  • Inner Circuit.
  • Construction Silicon carbide epitaxial planar type Schottky diode Datasheet.
  • Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak) VRM 1200 Reverse voltage (DC) VR 1200 Continuous forward current IF 30 Surge nonrepetitive forward current i2t value PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=.

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Datasheet Details

Part number S6307
Manufacturer ROHM
File Size 946.86 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet S6307 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S6307 SiC Schottky Barrier Diode VR 1200V IF 30A*1 QC 82nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Inner Circuit Construction Silicon carbide epitaxial planar type Schottky diode Datasheet Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak) VRM 1200 Reverse voltage (DC) VR 1200 Continuous forward current IF 30 Surge nonrepetitive forward current i2t value PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C IFSM *2 ∫i2d*t2 190 140 780 195 109 Junction temperature Tj 175 Range of storage temperature Tstg 55 to 175 *1 Limited by Tj *2 Assumes Zth(j-a) of 0.36 °C/W or less. (Pulse Width = 8.