RF05VA1SFH
Key Features
- 3±0.05
- 17±0.1 0.05 for lLand size figure (Unit : mm) 1.1
- 9±0.1 2.5±0.2
- 8 0.5 2.0 2)Ultra high switching speed 3)Low VF d lConstruction endens Silicon epitaxial planer TUMD2
- 8±0.05 ROHM : TUMD2
- 6±0.2 0.1 dot (year week factory) + day lStructure lTaping dimensions (Unit : mm)
- 0±0.1 2.0±0.05 φ 1.55±0.1 0
- 75±0.1 ecomwmDesig lAbsolute maximum ratings (Ta=25°C) Parameter Symbol R e Reverse voltage (repetitive) VRM Reverse voltage (DC) VR t Average rectified forward current (*1) Io N Forward current surge peak (60Hz
- 1cyc) o Junction temperature IFSM Tj Storage temperature Tstg N(*1)On the Glass epoxy substrate
- 43±0.05
