RB238NS100
RB238NS100 is Schottky Barrier Diode manufactured by ROHM.
Schottky Barrier Diode
Data Sheet l Application Switching power supply l Dimensions (Unit : mm) l Land size figure (Unit : mm) l Features 1) Cathode mon type. 2) Low IR 3) High reliability
RB238 NS100
1 l Structure
Cathode l Construction Silicon epitaxial planar
ROHM : TO-263S JEITA : SC-83 1 Manufacture Year, Week and Day l Taping specifications (Unit : mm)
Anode Anode l Absolute maximum ratings (Tc = 25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (- 1)
VRM VR Io
110 100 40
Forward current surge peak (60Hz- 1cyc) (- 2) Junction temperature
IFSM Tj
100 150
Storage temperature (- 1)1/2Io Per Diode, 60Hz sine wave (- 2)Per Diode
Tstg
-55 to +150 l Electrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage Reverse current Thermal impedance
- - 0.86 IR
- - 20 θjc 2.00
Unit V V A A °C °C
Unit Conditions V IF=20A m A VR=100V
°C/W junction to...
