RB238NS100
Overview
- 1cyc) (*2) Junction temperature IFSM Tj 100 150 Storage temperature (*1)1/2Io Per Diode, 60Hz sine wave (*2)Per Diode Tstg -55 to +150 lElectrical characteristics (Tj = 25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Thermal impedance VF - - 0.86 IR - - 20 θjc 2.00 Unit V V A A °C °C Unit Conditions V IF=20A mA VR=100V °C/W junction to case
