The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky barrier diode
RB095T-90
Applications Switching power supply
Dimensions (Unit : mm)
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
Construction Silicon epitaxial planer
9
Data Sheet
Structure (1) (2) (3)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1)
VRM 90 VR 90 Io 6
Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature
IFSM Tj
100 150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=127C
Electrical characteristic (Ta=25°C) Parameter
Forward voltage Reverse current Thermal impedance
Symbol Min. Typ. Max. VF - - 0.75 IR - - 150 jc - - 1.
RB095T-90 Datasheet
