R6030ENX Datasheet | ROHM

　　Nch 600V 30A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.130Ω ±30A 86W l Features 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; Ro HS pliant l Outline TO-220FM 　 　　　　　　 l Inner circuit 　 l Application Switching l Packaging specifications Code Packing C7 G Tube C7 Tube- - (Blank) Bulk- - Package dimensions are different l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID- 1 IDP- 2 600 V ±30 A ±80 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive IAS EAS- 3 EAS- 3 5.2 A 636 m J 0.96 m J Power dissipation (Tc = 25°C) PD 86 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to...