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R6009JNJ
Nch 600V 9A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.585Ω
±9A 125W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant
lOutline
LPT(S)
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL
Marking
R6009JNJ
Quantity (pcs)
1000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
Continuous drain current (Tc = 25°C)
ID*1
±9
A
Pulsed drain current
IDP*2
±27
A
Gate - Source voltage
VGSS
±30
V
Avalanche current, single pulse
IAS*3
1.
R6009JNJ Datasheet
