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Rohm Semiconductor Electronic Components Datasheet

IMD6AFRA Datasheet

NPN + PNP Complex Digital Transistors

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EEMMDD66FH/ AU/MUDM6DN6N/FIHMAD/6IMAD6AFRA
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
AEC-Q101 Qualified
<For DTr1(NPN)>
lOutline
Parameter
VCEO
IC
R1
Value
50V
100mA
4.7kW
EMT6
(6)
(5)
(4)
(1)
(2)
(3)
EMEDM6DF6HA
(SC-107C)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UUMMDD6N6NFHA
SOT-353 (SC-88)
<For DTr2(PNP)>
Parameter
VCEO
IC
R1
Value
-50V
-100mA
4.7kW
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMIDM6DA6FARA
SOT-457 (SC-74)
lFeatures
1) Both the DTC143T chip and DTA143T chip
in one package.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
lInner circuit
Collector
(6)
Base
(5)
Emitter
(4)
DTr1
DTr2
(1)
Emitter
(2)
Base
(3)
Collector
EMEDM6FDH6A//UUMMD6NNFHA
Collector
(4)
Base
(5)
Emitter
(6)
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Part No.
Package
EMD6FHA
UMD6NNFHA
IMD6AAFRA
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
DTr2
DTr1
(3)
Emitter
(2)
Base
(1)
Collector
IMIMDD6A6FARA
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
D6
D6
D6
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/7
2013.05 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

IMD6AFRA Datasheet

NPN + PNP Complex Digital Transistors

No Preview Available !

EMD6F/HUAM/DU6MND/ 6IMNDFH6AA / IMD6AFRA
lAbsolute maximum ratings (Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EEMMDD6F6H/AU/ MUMDD66NNFHA
Collector Power dissipation
IIMMDD66AAFRA
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC *2
Tj
Tstg
Data Sheet
DTr1(NPN) DTr2(PNP)
50 -50
50 -50
5 -5
100 -100
150 (Total)*3
300 (Total)*4
150
-55 to +150
Unit
V
V
V
mA
mW
mW
°C
°C
lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage BVCBO IC= 50mA
Collector-emitter breakdown voltage BVCEO IC= 1mA
Emitter-base breakdown voltage
BVEBO IE= 50mA
Collector cut-off current
ICBO VCB = 50V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter saturation voltage VCE(sat) IC / IB= 5mA / 0.25mA
DC current gain
hFE VCE= 5V, IC= 1mA
Input resistance
R1 -
Transition frequency
fT *1
VCE = 10V, IE = -5mA
f = 100MHz
Min.
50
50
5
-
-
-
100
3.29
-
Typ.
-
-
-
-
-
-
300
4.7
250
Max.
-
-
-
500
500
300
600
6.11
-
Unit
V
nA
nA
mV
-
-
MHz
lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage BVCBO IC= -50mA
Collector-emitter breakdown voltage BVCEO IC= -1mA
Emitter-base breakdown voltage
BVEBO IE= -50mA
Collector cut-off current
ICBO VCB = -50V
Emitter cut-off current
IEBO VEB = -4V
Collector-emitter saturation voltage VCE(sat) IC / IB= -5mA / -0.25mA
DC current gain
hFE VCE= -5V, IC= -1mA
Input resistance
R1 -
Transition frequency
fT *1
VCE = -10V, IE = 5mA
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min.
-50
-50
-5
-
-
-
100
3.29
-
Typ.
-
-
-
-
-
-
300
4.7
250
Max.
-
-
-
-500
-500
-300
600
6.11
-
Unit
V
nA
nA
mV
-
-
MHz
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/7
2013.05 - Rev.B


Part Number IMD6AFRA
Description NPN + PNP Complex Digital Transistors
Maker ROHM
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IMD6AFRA Datasheet PDF






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