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Rohm Semiconductor Electronic Components Datasheet

DTC115TE Datasheet

NPN 100mA 50V Digital Transistors

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DTC115T series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCEO
IC
R1
 
Value
50V
100mA
100kΩ
 
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
 with complete isolation to allow negative biasing
 of the input. They also have the advantage of
 completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
5) Complementary PNP Types: DTA115T series
6) Lead Free/RoHS Compliant.
lOutline
VMT3
EMT3
 
DTC115TM
(SC-105AA)
UMT3
 
DTC115TE
SOT-416(SC-75A)
SMT3
  
DTC115TUA
DTC115TKA
SOT-323(SC-70)
SOT-346(SC-59)
                            
lInner circuit
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
B: BASE
C: COLLECTOR
E: EMITTER
lPackaging specifications
Part No.
Package
Package
size
DTC115TM
DTC115TE
DTC115TUA
DTC115TKA
VMT3
EMT3
UMT3
SMT3
1212
1616
2021
2928
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2L 180
8
8000
09
TL 180
8
3000
09
T106
180
8
3000
09
T146
180
8
3000
09
                                                                                        
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
20121023 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

DTC115TE Datasheet

NPN 100mA 50V Digital Transistors

No Preview Available !

DTC115T series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTC115TM
Power dissipation
DTC115TE
DTC115TUA
DTC115TKA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
50
50
5
100
150
150
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = 50μA
VCB = 50V
VEB = 4V
IC / IB = 1mA / 0.1mA
VCE = 5V, IC = 1mA
-
Transition frequency
f
*2
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
50 - - V
50 - - V
5- -V
- - 0.5 μA
- - 0.5 μA
- - 0.3 V
100 250 600 -
70 100 130 kΩ
- 250 - MHz
                                            
 
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/7
                                        
20121023 - Rev.001


Part Number DTC115TE
Description NPN 100mA 50V Digital Transistors
Maker ROHM
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DTC115TE Datasheet PDF






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